This is the accepted manuscript of a paper published in Applied Physics Letters (Reid BPL, Kocher C, Zhu T, Oehler F, Chan CCS, Oliver RA, Taylor RA, Applied Physics Letters, 2015, 106, 171108, doi:10.1063/1.4919656). The final version is available at http://dx.doi.org/10.1063/1.4919656 ; Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ?40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between ?800??eV and +800??eV, with no clear correlation between fine structure splitting and emission energy. ; This research was supported by the Engineering and Physical Sciences Research Council (EPSRC) UK (Grant No. EP/H047816/1).