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American Institute of Physics, Applied Physics Letters, 22(99), p. 222904

DOI: 10.1063/1.3664394

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Domain structure and in-plane switching in a highly strained Bi0.9Sm0.1FeO3 film

Journal article published in 2011 by Weigang Chen, Wei Ren, Lu You, Yurong Yang, Zuhuang Chen, Yajun Qi, Xi Zou, Junling Wang ORCID, Thirumany Sritharan, Ping Yang, L. Bellaiche, Lang Chen
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We report the domain structure and ferroelectric properties of a 32 nm-thick Bi0.9Sm0.1FeO3film epitaxially grown on a LaAlO3 (LAO) substrate. This film exhibits a monoclinic Mc phase, with its monoclinic distortion and anisotropy of in-plane (IP) lattice parameters being both smaller than those of pure BiFeO3 (BFO) grown on LaAlO3. Polarization hysteresis loops measured using a quasi-planar capacitor show an in-planepolarization up to 30 μC/cm2. Piezoresponse force microcopy demonstrates that a 180° in-planepolarization switching accompanied by a 90° domain wall rotation takes place after electric poling. First-principles calculations suggest the differences between highly strained Sm-substituted and pure BiFeO3.