The Electrochemical Society, ECS Solid State Letters, 7(3), p. Q36-Q39
DOI: 10.1149/2.0101407ssl
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The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaO x device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of conductive filaments in the oxide compound.