Published in
The Electrochemical Society, ECS Solid State Letters, 7(3), p. Q36-Q39
DOI: 10.1149/2.0101407ssl
Links
Tools
A ZnTaOx based resistive switching random access memory
Journal article published in 2014 by
K. Zheng,
J. L. Zhao,
K. S. Leck,
K. L. Teo,
E. G. Yeo,
X. W. Sun 
This paper is available in a repository.
Full text: Download
Published version:
archiving forbidden
Data provided by 
Abstract
The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaO x device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of conductive filaments in the oxide compound.