Dissemin is shutting down on January 1st, 2025

Published in

American Institute of Physics, Journal of Vacuum Science and Technology B, 6(41), 2023

DOI: 10.1116/6.0003119

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E-mode AlGaN/GaN HEMTs using p-NiO gates

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

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Preprint: archiving allowed
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Postprint: archiving allowed
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Data provided by SHERPA/RoMEO

Abstract

Sputtered p-NiO films were used to suppress gate leakage and produce a positive shift in the gate voltage of AlGaN/GaN high-electron mobility transistors for e-mode operation. A direct comparison with Schottky-gated devices fabricated on the same wafer shows the utility of the NiO in increasing the on-off ratio and shifting the threshold voltage from −0.95 V (Schottky gated) to +0.9 V (NiO gated). The breakdown voltage was 780 V for a 40 μm drain-source separation. The subthreshold swing decreased from 181 mV/dec for Schottky-gated HEMTs to 128 mV/dec on NiO-gated devices. The simple fabrication process without any annealing or passivation steps shows the promise of NiO gates for e-mode AlGaN/GaN HEMT operation.