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Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 3(71), p. 1827-1833, 2024

DOI: 10.1109/ted.2023.3326116

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BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs—Part I: Experimental Results With Boosted Memory Window

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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