Published in
Springer, Journal of Materials Science: Materials in Electronics, 6(35), 2024
DOI: 10.1007/s10854-024-12174-7
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A novel approach to Si0.5Ge0.5 channel FinFET fabrication: utilizing a three-layer SiGe strain relaxation buffer and In-Situ phosphorus doping
Journal article published in 2024 by
Yan Li 
,
Huaizhi Luo,
Anlan Chen,
Xiaotong Mao,
Fei Zhao,
Jun Luo,
Yongliang Li
,
Huaizhi Luo,
Anlan Chen,
Xiaotong Mao,
Fei Zhao,
Jun Luo,
Yongliang Li
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