Dissemin is shutting down on January 1st, 2025

Published in

IOP Publishing, JPhys Energy, 2(6), p. 025005, 2024

DOI: 10.1088/2515-7655/ad2452

Links

Tools

Export citation

Search in Google Scholar

Tailoring dielectric permittivity of epitaxial Gd-doped CeO<sub>2−x </sub> films by ionic defects

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

Full text: Download

Green circle
Preprint: archiving allowed
Green circle
Postprint: archiving allowed
Green circle
Published version: archiving allowed
Data provided by SHERPA/RoMEO

Abstract

Abstract Engineering materials with highly tunable physical properties in response to external stimuli is a cornerstone strategy for advancing energy technology. Among various approaches, engineering ionic defects and understanding their roles are essential in tailoring emergent material properties and functionalities. Here, we demonstrate an effective approach for creating and controlling ionic defects (oxygen vacancies) in epitaxial Gd-doped CeO2−x (CGO)(001) films grown on Nb:SrTiO3(001) single crystal. Our results exhibit a significant limitation in the formation of excess oxygen vacancies in the films during high-temperature film growth. However, we have discovered that managing the oxygen vacancies in the epitaxial CGO(001) films is feasible using a two-step film growth process. Subsequently, our findings show that manipulating excess oxygen vacancies is a key to the emergence of giant apparent dielectric permittivity (e.g. ε ′ ≈ 106) in the epitaxial films under electrical field control. Overall, the strategy of tuning functional ionic defects in CGO and similar oxides is beneficial for various applications such as electromechanical, sensing, and energy storage applications.