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IOP Publishing, Journal of Physics: Condensed Matter, 36(36), p. 365702, 2024

DOI: 10.1088/1361-648x/ad52e0

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Crystal structure, properties and pressure-induced insulator-metal transition in layered kagome chalcogenides

Journal article published in 2024 by Hong Du ORCID, Yu Zheng, Cuiying Pei, Chi-Ming Yim ORCID, Yanpeng Qi, Ruidan Zhong
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Abstract Layered materials with kagome lattice have attracted a lot of attention due to the presence of nontrivial topological bands and correlated electronic states with tunability. In this work, we investigate a unique van der Waals (vdW) material system, A 2 M 3 X 4 (A = K, Rb, Cs; M = Ni, Pd; X = S, Se), where transition metal kagome lattices, chalcogen honeycomb lattices and alkali metal triangular lattices coexist simultaneously. A notable feature of this material is that each Ni/Pd atom is positioned in the center of four chalcogen atoms, forming a local square-planar environment. This crystal field environment results in a low spin state S= 0 of Ni2+/Pd2+. A systematic study of the crystal growth, crystal structure, magnetic and transport properties of two representative compounds, Rb2Ni3S4 and Cs2Ni3Se4, has been carried out on powder and single crystal samples. Both compounds exhibit nonmagnetic p-type semiconducting behavior, closely related to the particular chemical environment of Ni2+ ions and the alkali metal intercalated vdW structure. Additionally, Cs2Ni3Se4 undergoes an insulator-metal transition (IMT) in transport measurements under pressure up to 87.1 GPa without any structural phase transition, while Rb2Ni3S4 shows the tendency to be metalized.