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Wiley, Small, 49(19), 2023

DOI: 10.1002/smll.202303595

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Exploiting Ambipolarity in Graphene Field‐Effect Transistors for Novel Designs on High‐Frequency Analog Electronics

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

AbstractExploiting ambipolar electrical conductivity based on graphene field‐effect transistors has raised enormous interest for high‐frequency (HF) analog electronics. Controlling the device polarity, by biasing the graphene transistor around the vertex of the V‐shaped transfer curve, enables to redesign and highly simplify conventional analog circuits, and simultaneously to seek for multifunctionalities, especially in the HF domain. This study presents new insights for the design of different HF applications such as power amplifiers, mixers, frequency multipliers, phase shifters, and modulators that specifically leverage the inherent ambipolarity of graphene‐based transistors.