Charged domain walls (CDW) in ferroelectric materials are interesting from fundamental and applied points of view, since they have electrical properties different from bulk ones. At the microstructural level, CDW in ferroelectrics are two-dimensional defects that separate regions of the material with different directions of spontaneous polarization vectors. Compensation of the electric field of the bound ionic charge of the CDW by mobile carriers leads to the formation of extended narrow channels with increased conductivity in the original dielectric material. By controlling the position and angle of inclination of the CDW relative to the direction of spontaneous polarization, it is possible to change its conductivity in a wide range, which opens up broad prospects for creating memory devices, including for neuromorphic systems. The review presents the current state of research in the field of formation and application of CDW formed in single crystals of uniaxial ferroelectric lithium niobate (LiNbO₃, LN) as resistive and memristive switching devices. The main methods for forming CDW in single crystals and thin films of LN are considered, and modern data on the electrophysical properties and methods for controlling the electrical conductivity of CDW are presented. The prospects for using CDW in memory devices with resistive and memristive switching are discussed.