Integrated logic circuits using atomically thin, two‐dimensional (2D) materials offer several potential advantages compared to established silicon technologies such as increased transistor density, circuit complexity, and lower energy dissipation leading to scaling benefits. In this article, a novel approach to achieve tunable doping in 2D semiconductors is explored to achieve complementary transistors and logic integration. By selectively transferring WSe₂ onto hBN and SiO₂ substrates, complementary transistor behavior (n‐ and p‐type) was achieved using a UV light source and electrostatic activation. Furthermore, advanced characterization techniques, including high‐resolution transmission electron microscopy (HRTEM) and Kelvin probe force microscopy (KPFM), provided insights into the chemical composition and surface potential changes after UV writing. Finally, a logic inverter was successfully implemented using selectively photo‐induced doped WSe₂ transistors, showcasing the potential for practical logic applications. This innovative method opens new avenues for designing energy‐efficient and reconfigurable 2D semiconductor circuits, addressing key challenges in modern electronics.