Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 4(45), p. 657-660, 2024
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1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
Journal article published in 2024 by
S. Kumar 
,
K. Geens ,
A. Vohra ,
D. Wellekens ,
D. Cingu ,
E. Fabris ,
T. Cosnier,
H. Hahn ,
B. Bakeroot ,
N. Posthuma ,
R. Langer,
S. Decoutere
,
K. Geens ,
A. Vohra ,
D. Wellekens ,
D. Cingu ,
E. Fabris ,
T. Cosnier,
H. Hahn ,
B. Bakeroot ,
N. Posthuma ,
R. Langer,
S. Decoutere
This paper was not found in any repository, but could be made available legally by the author.
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