The scientific community believes that high-quality, bulk layered, semiconducting single crystals are crucial for producing two-dimensional (2D) nanosheets. This has a significant impact on current cutting-edge science in the development of next-generation electrical and optoelectronic devices. To meet this ever-increasing demand, efforts have been made to manufacture high-quality SnS2 single crystals utilizing low-cost CVT (chemical vapor transportation) technology, which allows for large-scale crystal production. Based on the chemical reaction that occurs throughout the CVT process, a viable mechanism for SnS2 growth is postulated in this paper. Optical, XRD with Le Bail fitting, TEM, and SEM are used to validate the quality, phase, gross structural/microstructural analyses, and morphology of SnS2 single crystals. Furthermore, Raman, TXRF, XPS, UV–Vis, and PL spectroscopy are used to corroborate the quality of the SnS2 single crystals, as well as the proposed energy level diagram for indirect transition in the bulk SnS2 single crystals. As a result, the suggested method provides a cost-effective method for growing high-quality SnS2 single crystals, which could lead to a new alternative resource for producing 2D SnS2 nanosheets, which are in great demand for designing next-generation optoelectronic and quantum devices.