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Royal Society of Chemistry, RSC Advances, 5(14), p. 3232-3240, 2024

DOI: 10.1039/d3ra08289j

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Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

High-temperature operando neutron reflectometry of Ni/Cu-mediated graphene growth on 3C–SiC shows (1) formation of a metal alloy, (2) nickel silicidation releasing atomic carbon, and (3) formation of graphene at 1100 °C in liquid phase.