AbstractThe photoelectric properties of nontoxic Sn‐based perovskite make it a promising alternative to toxic Pb‐based perovskite. It has superior photovoltaic performance in comparison to other Pb‐free counterparts. The facile oxidation of Sn²⁺ to Sn⁴⁺ presents a notable obstacle in the advancement of perovskite solar cells that utilize Sn, as it adversely affects their stability and performance. The study revealed the presence of a Sn⁴⁺ concentration on both the upper and lower surfaces of the perovskite layer. This discovery led to the adoption of a bi‐interface optimization approach. A thin layer of Sn metal was inserted at the two surfaces of the perovskite layer. The implementation of this intervention yielded a significant decrease in the levels of Sn⁴⁺ and trap densities. The power conversion efficiency of the device was achieved at 14.31 % through the optimization of carrier transportation. The device exhibited operational and long‐term stability.