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IOP Publishing, Applied Physics Express, 3(17), p. 036503, 2024

DOI: 10.35848/1882-0786/ad2d75

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Electrical properties and band alignments of Sb<sub>2</sub>Te<sub>3</sub>/Si heterojunctions, low-barrier Sb<sub>2</sub>Te<sub>3</sub>/n-Si and high-barrier Sb<sub>2</sub>Te<sub>3</sub>/p-Si junctions

Journal article published in 2024 by Naoya Okada ORCID, Wen Hsin Chang ORCID, Shogo Hatayama ORCID, Yuta Saito ORCID, Toshifumi Irisawa ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Abstract We investigated the electrical junction properties of the layered Sb2Te3 film formed on Si substrates. The current−voltage characteristics of the Sb2Te3/n-Si heterojunction showed an ohmic properties, whereas the Sb2Te3/p-Si heterojunction exhibited rectifying properties with a high barrier height of 0.77 eV. The capacitance−voltage characteristics of MOS capacitors with the Sb2Te3 electrode indicated an effective work function of 4.44 eV for the Sb2Te3 film. These findings suggest that the Sb2Te3/Si heterostructure possesses a low conduction band offset, as inferred from the temperature dependence of the current−voltage characteristics of the Sb2Te3/n-Si.