In this work, we investigate the effective background charge density in intrinsic Si0.06Ge0.94/Ge plastically relaxed heterostructures deposited on Si(001). Hall effect measurements and capacitance–voltage profiling reveal a p-type conductivity in the nominally intrinsic layer with a hole concentration in the mid 1015 cm−3 range at temperatures between 50 and 200 K. In view of the carrier freeze out that we observe below 50 K, we attribute the origin of these carriers to the ionization of shallow acceptor-like defect states above the valence band. In addition, one dominant hole trap located at mid-gap position is found by deep level transient spectroscopy. Carrier trapping kinetics measurements can be interpreted as due to a combination of point defects, likely trapped in the strain field of extended defects, i.e., the threading dislocation.