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BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN-based high electron mobility transistor

Preprint published in 2020 by Rongyu Lin ORCID, Yi Lu ORCID
This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

Full text: Unavailable

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Preprint: policy unknown
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Postprint: policy unknown
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Published version: policy unknown