Abstract Flexible Ga₂O₃ devices are becoming increasingly important in the world of electronic products due to their unique properties. As a semiconductor, Ga₂O₃ has a much higher bandgap, breakdown electric field, and dielectric constant than silicon, making it a great choice for next-generation semiconductor materials. In addition, Ga₂O₃ is a particularly robust material that can withstand a wide range of temperatures and pressure levels, thus is ideal for harsh environments such as space or extreme temperatures. Finally, its superior electron transport properties enable higher levels of electrical switching speed than traditional semiconducting materials. Endowing Ga₂O₃-based devices with good mechanical robustness and flexibility is crucial to make them suitable for use in applications such as wearable electronics, implantable electronics, and automotive electronics However, as a typical ceramic material, Ga₂O₃ is intrinsically brittle and requires high temperatures for its crystallization. Therefore fabricating flexible Ga₂O₃ devices is not a straightforward task by directly utilizing the commonly used polymer substrates. In this context, in recent years people have developed several fabrication routes, which are the transfer route, in situ room-temperature amorphous route, and in situ high-temperature epitaxy route. In this review, we discuss the advantages and limitations of each technique and evaluate the opportunities for and challenges in realizing the applications of flexible Ga₂O₃ devices.