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Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 6(70), p. 3005-3010, 2023

DOI: 10.1109/ted.2023.3270134

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Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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