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IOP Publishing, Applied Physics Express, 1(17), p. 011008, 2024

DOI: 10.35848/1882-0786/ad15f3

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Rutile-type Ge<sub> x </sub>Sn<sub>1−x </sub>O<sub>2</sub> alloy layers lattice-matched to TiO<sub>2</sub> substrates for device applications

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Abstract We report the characterization and application of mist-CVD-grown rutile-structured Ge x Sn1−x O2 (x = ∼0.53) films lattice-matched to isostructural TiO2(001) substrates. The grown surface was flat throughout the growth owing to the lattice-matching epitaxy. Additionally, the film was single-crystalline without misoriented domains and TEM-detectable threading dislocations due to the coherent heterointerface. Using the Ge0.49Sn0.51O2 film with a carrier density of 7.8 × 1018 cm−3 and a mobility of 24 cm2V−1s−1, lateral Schottky barrier diodes were fabricated with Pt anodes and Ti/Au cathodes. The diodes exhibited rectifying properties with a rectification ratio of 8.2 × 104 at ±5 V, showing the potential of Ge x Sn1-x O2 as a practical semiconductor.