Published in
American Institute of Physics, Applied Physics Letters, 20(86), p. 202101
DOI: 10.1063/1.1925320
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Controlled shallow single ion implantation in silicon using an active substrate for sub-20 keV ions
Journal article published in 2005 by
David Norman Jamieson,
C. J. Yang,
S. M. Hearne,
T. Hopf,
F. E. Stanley,
Christopher I.-A.-N. Pakes 
,
Stephen Prawer,
M. Mitic,
E. Gauja,
F. E. Hudson,
S. E. Andresen,
A. S. Dzurak,
R. G. Clark,
--
,
Stephen Prawer,
M. Mitic,
E. Gauja,
F. E. Hudson,
S. E. Andresen,
A. S. Dzurak,
R. G. Clark,
--
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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Abstract
We demonstrate a method for the controlled implantation of single ions into a silicon substrate with energy of sub-20-keV. The method is based on the collection of electron-hole pairs generated in the substrate by the impact of a single ion. We have used the method to implant single 14-keV P31 ions through nanoscale masks into silicon as a route to the fabrication of devices based on single donors in silicon.