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Gallium Nitride Materials and Devices XVI, 2021

DOI: 10.1117/12.2578123

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How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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