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American Institute of Physics, Applied Physics Letters, 11(118), p. 112104, 2021

DOI: 10.1063/5.0042857

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High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

Journal article published in 2021 by M. Hayden Breckenridge ORCID, Pegah Bagheri ORCID, Qiang Guo ORCID, Biplab Sarkar ORCID, Dolar Khachariya ORCID, Spyridon Pavlidis ORCID, James Tweedie, Ronny Kirste, Seiji Mita, Pramod Reddy ORCID, Ramón Collazo, Zlatko Sitar ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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