Abstract The quantum confinement effect resulting from size reduction drastically alters the electronic structure and optical properties of optoelectronic materials. Quantum confinement in nanomaterials can be efficiently controlled by morphology variation combined characteristics of nanomaterials, such as their size, shape, and spatial organization. In this study, considering indium arsenide (InAs) in tetrahedral semiconductors as an example, we demonstrated the controllable morphology evolution of InAs nanostructures by tuning the growth conditions. We used the atomistic pseudopotential method to investigate the morphology-dependent electronic and optical properties of InAs nanostructures: tapered and uniform nanostructures, including the absorption spectra, single-particle energy levels, distribution and overlap integral of band-edge states, and exciton binding energies. Compared with uniform nanomaterials, a weaker quantum confinement effect was observed in the tapered nanomaterials, because of which tapered InAs nanostructures have a smaller bandgap, larger separation of photoinduced carriers, and smaller exciton binding energy. The absorption spectra of InAs nanostructures also exhibit strong morphology dependence. Our results indicate that morphology engineering can be exploited as a potential approach for modulating the electronic and optoelectronic properties of nanomaterials.