Ti–Si–C–ON films were deposited by DC reactive magnetron sputtering using different partial pressure of oxygen (pO2) and nitrogen (pN2) ratio. Compositional analysis revealed the existence of two different growth zones for the films; one zone deposited under low pO2/pN2 and another zone deposited under high pO2/pN2. The films produced under low pO2/pN2 were deposited at a lower rate and presented a fcc structure, as well as, dense and featureless morphologies. The films deposited with high pO2/pN2, consequently higher oxygen content, were deposited at a higher rate and developed an amorphous structure. The structural changes are consistent with the hardness and Young's modulus evolution, as seen by the significant reduction of the hardness and influence on the Young's modulus by increasing pO2/pN2.