Abstract The effect of the size of the rods at the structured silicon target surface on the parameters of the plasma produced when the target is exposed to a high-contrast femtosecond laser pulse with an intensity of 2 × 10¹⁸ W cm⁻² is investigated. It is shown that irradiation of a target with subwavelength rods (∼ 100 nm in diameter) provides a significant (up to 250 keV) increase in the temperature of hot plasma electrons and their number in comparison with those obtained in the case of a plane target. It was found that in this case the yield of hard X-ray radiation increases several-fold. The observed effect can be attributed to increased absorption and particle motion in a complex field near plasma nonuniformities. It is shown that the presence of rods with a characteristic size of ∼ 1 μm promotes an increase in the production efficiency of multiply charged silicon ions. The result obtained is apparently associated with the radiation penetration between the rods and with collisional ionisation of particles as they fly into vacuum from deeper target layers.