Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 7(42), p. 1081-1084, 2021
Links
Tools
High-Performance WSe₂ n-Type Field-Effect Transistors Enabled by InOₓ Damage-Free Doping
Journal article published in 2021 by
Hao Huang,
Leixi Wang,
Yawei Lv 
,
Xingqiang Liu ,
Xingzhong Zhao,
Lei Liao,
Zhiyong Fan,
Xuming Zou
,
Xingqiang Liu ,
Xingzhong Zhao,
Lei Liao,
Zhiyong Fan,
Xuming Zou
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 