Published in
Elsevier, Microelectronics Reliability, (126), p. 114377, 2021
DOI: 10.1016/j.microrel.2021.114377
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Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode
Journal article published in 2021 by
C. Casu,
M. Buffolo,
A. Caria 
,
C. De Santi,
E. Zanoni,
G. Meneghesso,
M. Meneghini
,
C. De Santi,
E. Zanoni,
G. Meneghesso,
M. Meneghini
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