Published in
American Institute of Physics, Applied Physics Letters, 19(119), p. 192101, 2021
DOI: 10.1063/5.0065776
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High and broadband sensitivity front-side illuminated InGaAs photo field-effect transistors (photoFETs) with SWIR transparent conductive oxide (TCO) gate
Journal article published in 2021 by
Tatsuro Maeda 
,
Kazuaki Oishi,
Hiroyuki Ishii,
Wen Hsin Chang ,
Tetsuji Shimizu ,
Akira Endoh ,
Hiroki Fujishiro,
Takashi Koida
,
Kazuaki Oishi,
Hiroyuki Ishii,
Wen Hsin Chang ,
Tetsuji Shimizu ,
Akira Endoh ,
Hiroki Fujishiro,
Takashi Koida
This paper was not found in any repository, but could be made available legally by the author.
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