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Institute of Electrical and Electronics Engineers, IEEE Journal of the Electron Devices Society, (10), p. 29-34, 2022

DOI: 10.1109/jeds.2021.3129279

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1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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