Published in
Institute of Electrical and Electronics Engineers, IEEE Journal of the Electron Devices Society, (10), p. 72-77, 2022
DOI: 10.1109/jeds.2021.3133570
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Ultrathin MoS₂-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO₂ and Body-Potential Control
Journal article published in 2022 by
Jiawen Xiang,
Wen Hsin Chang 
,
Takuya Saraya,
Toshiro Hiramoto ,
Toshifumi Irisawa ,
Masaharu Kobayashi
,
Takuya Saraya,
Toshiro Hiramoto ,
Toshifumi Irisawa ,
Masaharu Kobayashi
This paper is made freely available by the publisher.
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