Published in

ECS Meeting Abstracts, 26(MA2010-02), p. 1671-1671, 2010

DOI: 10.1149/ma2010-02/26/1671

The Electrochemical Society, ECS Transactions, 12(33), p. 23-34, 2010

DOI: 10.1149/1.3501031

The Electrochemical Society, Journal of The Electrochemical Society, 4(158), p. H405

DOI: 10.1149/1.3546040

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Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface

Journal article published in 2010 by Riko I. Made ORCID, Chee Lip Gan, Kin Leong Pey, Chuan Seng Tan
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Metal to metal bonding, particularly Cu-Cu bonding, is an important process step of three-dimensional integrated circuits (3DICs) that utilizes wafer bonding. The use of Cu to Cu bonding in 3DICs is advantageous as it functions as both the glue layer and electrical interconnection. It has been observed that the contact resistance of bonded Cu interface could be decreased under direct current stressing. In this article, the mentioned phenomenon is modeled and simulated. Electromigration-induced contact resistance reduction of bonded interconnects may provide a method for postbonding bond property improvement for 3DICs.