Published in
Royal Society of Chemistry, RSC Advances, 3(12), p. 1278-1286, 2022
DOI: 10.1039/d1ra07276e
Links
Tools
High performance and gate-controlled GeSe/HfS<sub>2</sub> negative differential resistance device
Journal article published in 2022 by
Amir Muhammad Afzal 
,
Muhammad Zahir Iqbal ,
Muhammad Waqas Iqbal,
Thamer Alomayri,
Ghulam Dastgeer,
Yasir Javed ,
Naveed Akhter Shad,
Rajwali Khan,
M. Munir Sajid,
R. Neffati,
Tasawar Abbas,
Qudrat Ullah Khan
,
Muhammad Zahir Iqbal ,
Muhammad Waqas Iqbal,
Thamer Alomayri,
Ghulam Dastgeer,
Yasir Javed ,
Naveed Akhter Shad,
Rajwali Khan,
M. Munir Sajid,
R. Neffati,
Tasawar Abbas,
Qudrat Ullah Khan
This paper is made freely available by the publisher.
Full text: Download
Preprint: archiving forbidden
Data provided by 
Abstract
A novel and astonishing p-GeSe/n-HfS2 NDR device shows a high value for the peak-to-valley current ratio in the range of 5.8.