Published in
Proceedings, IEEE Tenth International Conference on Terahertz Electronics
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Terahertz intersubband emission from silicon-germanium quantum cascades
Journal article published in 2002 by
Rw W. Kelsall,
San Lin Liew,
Z. Ikonic,
Paul Harrison,
Stephen Anthony Lynch,
R. Bates,
Dj J. Paul 
,
Dj J. Norris,
Ag G. Cullis,
San Lin Liew,
S. Withington,
Dj J. Robbins,
P. Murzyn,
Cr R. Pidgeon,
D. D. Arnone
and other authors.
,
Dj J. Norris,
Ag G. Cullis,
San Lin Liew,
S. Withington,
Dj J. Robbins,
P. Murzyn,
Cr R. Pidgeon,
D. D. Arnone
and other authors.
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Abstract
Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si0.76Ge0.24/Si heterostructures grown on a Si0.8Ge0.2 relaxed buffer or 'virtual substrate'.