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IEEE International Conference on Group IV Photonics, 2005. @nd
DOI: 10.1109/group4.2005.1516386
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Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature
Journal article published in 2005 by
G. Matmon,
Jing Zhang,
Stephen Anthony Lynch,
P. Townsend,
Dj J. Paul 
,
M. Bain,
Hs S. Gamble,
Jing Zhang,
Z. Ikonic,
Rw W. Kelsall,
Paul Harrison,
Ieee
,
M. Bain,
Hs S. Gamble,
Jing Zhang,
Z. Ikonic,
Rw W. Kelsall,
Paul Harrison,
Ieee
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Abstract
The emission and absorption characteristics of boron-doped and phosphorous-doped silicon at terahertz frequencies are investigated. Different doping concentrations are considered and individual terahertz optical transitions are identified. The effect of temperature is considered.