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Molecular dynamics simulations of oxide memristors: thermal effects

Journal article published in 2010 by S. E. Savel'ev ORCID, A. S. Alexandrov, A. M. Bratkovsky, R. Stanley Williams
This paper is available in a repository.
This paper is available in a repository.

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Preprint: policy unknown
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Postprint: policy unknown
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Abstract

We have extended our recent molecular-dynamic simulations of memristors to include the effect of thermal inhomogeneities on mobile ionic species appearing during operation of the device. Simulations show a competition between an attractive short-ranged interaction between oxygen vacancies and an enhanced local temperature in creating/destroying the conducting oxygen channels. Such a competition would strongly affect the performance of the memristive devices. ; Comment: submit/0169777; 6 pages, 4 figures