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Optica, Optics Express, 24(29), p. 40360, 2021

DOI: 10.1364/oe.438157

Vertical External Cavity Surface Emitting Lasers (VECSELs) XI, 2022

DOI: 10.1117/12.2609591

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High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

We compare the gain and continuous wave lasing properties of two InGaSb-based vertical external cavity surface emitting lasers (InGaSb VECSEL) with different heat management approaches operating at a center wavelength of around 2 μ m . To date, intracavity heatspreaders have been required for good average output power, which have many trade-offs, especially for passive modelocking. Here we demonstrate a record high average output power of 810 mW without an intracavity heatspreader using a backside-cooled non-resonant VECSEL chip optimized for modelocking. In addition, we introduce and demonstrate an optical characterization for a wavelength range of 1.9 to 3 μ m to precisely measure wavelength-dependent gain saturation and spectral gain. Gain characteristics are measured as a function of wavelength, fluence, pump power and temperature. Small signal gain of more than 5%, small saturation fluences and broad gain bandwidths of more than 90 nm are demonstrated. In comparison to a commercial VECSEL chip with an intracavity heatspreader, we have obtained similar average output power even though our VECSEL chip is designed for antiresonance.