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American Institute of Physics, Journal of Applied Physics, 13(131), p. 134102, 2022

DOI: 10.1063/5.0084816

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Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/SiO<sub>x</sub>/Si (MFIS) gate structure

Journal article published in 2022 by Jiahui Duan ORCID, Hao Xu, Shujing Zhao, Fengbin Tian, Jinjuan Xiang, Kai Han, Tingting Li, Xiaolei Wang ORCID, Wenwu Wang, Tianchun Ye ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

This work investigates the impact of mobility degradation on endurance fatigue of a ferroelectric field-effect-transistor (FeFET) with the TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) gate structure. We use the split capacitance–voltage ( C– V) method to study the carrier mobility during the program/erase cycling. We find that significant mobility degradation occurs with increasing program/erase cycle and further deteriorates endurance characteristics. Our work provides mobility degradation as another endurance fatigue factor of FeFET besides charge trapping and trap generation, which is helpful for endurance improvement.