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Optica, Optics Letters, 22(37), p. 4681, 2012

DOI: 10.1364/ol.37.004681

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Using carrier-depletion silicon modulators for optical power monitoring

Journal article published in 2012 by Hui Yu, Dietmar Korn, Marianna Pantouvaki, Joris Van Campenhout, Katarzyna Komorowska, Peter Verheyen, Guy Lepage, Philippe Absil, David Hillerkuss, Luca Alloatti ORCID, Juerg Leuthold ORCID, Roel Baets, Wim Bogaerts
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075°C. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be 22  mA/W for a 3 mm long Mach-Zehnder modulator of 2×1018  cm-3 doping concentration at -7.1  V bias voltage and 5.9  mA/W for a ring modulator of 1×1018  cm-3 doping concentration at -10  V bias voltage. The former is used to demonstrate data detection of up to 35  Gbits/s.