Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H
Journal article published in 2022 by
Laetitia Vincent 
,
Elham M. T. Fadaly ,
Charles Renard ,
Wouter H. J. Peeters ,
Marco Vettori ,
Federico Panciera ,
Daniel Bouchier,
Erik P. A. M. Bakkers ,
Marcel A. Verheijen
,
Elham M. T. Fadaly ,
Charles Renard ,
Wouter H. J. Peeters ,
Marco Vettori ,
Federico Panciera ,
Daniel Bouchier,
Erik P. A. M. Bakkers ,
Marcel A. Verheijen
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