High‐Performance p ‐type 2D FET Based on Monolayer GeC with High Hole Mobility: A DFT‐NEGF Study
Journal article published in 2022 by
Jialin Yang,
Chuyao Chen,
Jingwen Zhang,
Wenhan Zhou 
,
Hengze Qu,
Jing Li,
Tingting Guo,
Xiaoqin Shi,
Zhenhua Wu,
Shengli Zhang
,
Hengze Qu,
Jing Li,
Tingting Guo,
Xiaoqin Shi,
Zhenhua Wu,
Shengli Zhang
This paper is made freely available by the publisher.
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