Published in

American Institute of Physics, Applied Physics Letters, 3(121), p. 032103, 2022

DOI: 10.1063/5.0096846

Links

Tools

Export citation

Search in Google Scholar

Si doping mechanism in MOVPE-grown (100) <b>β</b>-Ga<sub>2</sub>O<sub>3</sub> films

Journal article published in 2022 by Ta-Shun Chou ORCID, Saud Bin Anooz ORCID, Raimund Grüneberg, Natasha Dropka ORCID, Jana Rehm, Thi Thuy Vi Tran, Klaus Irmscher ORCID, Palvan Seyidov ORCID, Wolfram Miller ORCID, Zbigniew Galazka ORCID, Martin Albrecht ORCID, Andreas Popp ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Orange circle
Published version: archiving restricted
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

A Langmuir adsorption model of the Si incorporation mechanism into metalorganic vapor-phase epitaxy grown (100) β-Ga2O3 thin films is proposed in terms of the competitive surface adsorption process between Si and Ga atoms. The outcome of the model can describe the major feature of the doping process and indicate a growth rate-dependent doping behavior, which is validated experimentally and further generalized to different growth conditions and different substrate orientations.