Switching of magnetization by spin–orbit torque in the (Ga,Mn)(As,P) film was studied with currents along ⟨100⟩ crystal directions and an in-plane magnetic field bias. This geometry allowed us to identify the presence of two independent spin–orbit-induced magnetic fields: the Rashba field and the Dresselhaus field. Specifically, we observe that when the in-plane bias field is along the current (I[Formula: see text]H _bias), switching is dominated by the Rashba field, while the Dresselhaus field dominates magnetization reversal when the bias field is perpendicular to the current (I ⊥ H _bias). In our experiments, the magnitudes of the Rashba and Dresselhaus fields were determined to be 2.0 and 7.5 Oe, respectively, at a current density of 8.0 × 10⁵ A/cm².