We present measurements of fluorescence intensity trajectories and associated excited-state decay times from individual CdSe/oligo(phenylene vinylene) (CdSe-OPV) quantum dot nanostructures using time-tagged, time-resolved (TTTR) photon counting techniques. We find that fluorescence decay times for the quantum dot emitter in these composite systems are at least an order of magnitude shorter than ZnS-capped CdSe quantum dot systems. We show that both the blinking suppression and associated lifetime/count rate behavior can be described by a modified version of the diffusive reaction coordinate model which couples slow fluctuations in quantum dot electron (1Se, 1Pe) energies to Auger-assisted hole trapping processes, hence modifying both blinking statistics and excited-state decay rates.