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Published in

IOP Publishing, Journal of Physics: Materials, 4(5), p. 044005, 2022

DOI: 10.1088/2515-7639/ac93b5

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Copper migration and surface oxidation of CuxBi2Se3 in ambient pressure environments

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Abstract Chemical modifications such as intercalation can be used to modify surface properties or to further functionalize the surface states of topological insulators (TIs). Using ambient pressure x-ray photoelectron spectroscopy, we report copper migration in C u x B i 2 S e 3 , which occurs on a timescale of hours to days after initial surface cleaving. The increase in near-surface copper proceeds along with the oxidation of the sample surface and large changes in the selenium content. These complex changes are further modeled with core-level spectroscopy simulations, which suggest a composition gradient near the surface which develops with oxygen exposure. Our results shed light on a new phenomenon that must be considered for intercalated TIs—and intercalated materials in general—that surface chemical composition can change when specimens are exposed to ambient conditions.