This study provides the full-bandgap evaluation of defect state distributions in beta phase gallium oxide (β-Ga₂O₃) grown by low-pressure chemical vapor deposition (LPCVD) on (010) β-Ga₂O₃ substrates at high growth of up to 20 µm/h. Deep-level optical spectroscopy and deep-level transient spectroscopy measurements applied to Ni/β-Ga₂O₃ Schottky diodes revealed the presence of a previously unreported defect state at E_C-3.6 eV, which dominated the overall trap distribution in LPCVD grown material. However, states at E_C-0.8 eV, E_C-2.0 eV, and E_C-4.4. eV were also detected, similar to prior studies on β-Ga₂O₃ grown by other methods, with similar or lower concentrations for the LPCVD samples. The E_C-0.8 eV and E_C-2.0 eV states were previously connected to residual Fe impurities and gallium vacancies, respectively. The total concentration of traps in the LPCVD material was on par with or lower than the state-of-the-art metal–organic chemical vapor deposition-grown materials despite the much higher growth rate, and the distribution of states showed negligible dependence on SiCl₄ flow rate and doping concentration. These results demonstrate that the high growth rate of LPCVD-grown β-Ga₂O₃ is very promising for achieving thick, low defect density, and high-quality layers needed for multi-kV device applications.