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IOP Publishing, Japanese Journal of Applied Physics, 12(61), p. 125503, 2022

DOI: 10.35848/1347-4065/aca05b

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Trapping effects and surface/interface recombination of carrier recombination in single- or poly-crystalline metal halide perovskites

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Abstract The lifetime of a carrier is a crucial parameter for solar cell materials, and metal halide perovskite materials are promising for solar cell applications. In this study, we observed carrier recombination using time-resolved photoluminescence (TR-PL) and microwave photoconductivity decay (μ-PCD) in metal halide perovskite materials: NH3CH3PbI3 (MAPbI3), NH3CH3PbBr3 (MAPbBr3), and CsPbBr3 with single- and poly-crystalline structures. By comparing the decay curves of TR-PL and μ-PCD, we found trap levels in the band gap for all the materials. We employed two excitation wavelengths for the μ-PCD measurements, and we observed faster μ-PCD signal decays for short wavelength excitation for MAPbBr3 and CsPbBr3. Additionally, we established that the poly-crystals exhibited faster decay compared with the single crystals for MAPbBr3 and CsPbBr3. Therefore, we concluded that there are significant contributions of the interface and surface recombination on carrier recombination for MAPbBr3 and CsPbBr3, but not for MAPbI3.