Published in

American Institute of Physics, Applied Physics Letters, 24(121), p. 241603, 2022

DOI: 10.1063/5.0130069

Links

Tools

Export citation

Search in Google Scholar

High-mobility electron gas in Sr<sub>2</sub>TiO<sub>4</sub>/SrTiO<sub>3</sub> heterostructure engineered by vertical Ruddlesden–Popper faults

Journal article published in 2022 by T. T. Zhang ORCID, J. Y. Li ORCID, J. F. Yang ORCID, T. Y. Gao, H. Y. Sun ORCID, Z. B. Gu ORCID, Y. Deng ORCID, Y. F. Nie ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Orange circle
Published version: archiving restricted
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

High-mobility electron gases in SrTiO3-based heterostructures have been mainly synthesized on single TiO2 terminated SrTiO3 substrates. Here, we show a high-mobility electron gas observed in a Sr2TiO4/SrTiO3 heterostructure based on an untreated SrTiO3 substrate with mixed termination, showing the mobility value up to 28 000 cm2 V−1 s−1 at 2 K. SrO–SrO vertical Ruddlesden–Popper faults in the Sr2TiO4 film provide escape channels for oxygen atoms under high temperatures, enabling the as-grown tuning of oxygen vacancies in the SrTiO3 layer during film deposition and reversible after-growth modulation in a thermal annealing process.