Published in
American Institute of Physics, Applied Physics Letters, 24(121), p. 241603, 2022
DOI: 10.1063/5.0130069
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High-mobility electron gas in Sr<sub>2</sub>TiO<sub>4</sub>/SrTiO<sub>3</sub> heterostructure engineered by vertical Ruddlesden–Popper faults
,
J. Y. Li ,
J. F. Yang ,
T. Y. Gao,
H. Y. Sun ,
Z. B. Gu ,
Y. Deng ,
Y. F. Nie
Full text: Unavailable
Abstract
High-mobility electron gases in SrTiO3-based heterostructures have been mainly synthesized on single TiO2 terminated SrTiO3 substrates. Here, we show a high-mobility electron gas observed in a Sr2TiO4/SrTiO3 heterostructure based on an untreated SrTiO3 substrate with mixed termination, showing the mobility value up to 28 000 cm2 V−1 s−1 at 2 K. SrO–SrO vertical Ruddlesden–Popper faults in the Sr2TiO4 film provide escape channels for oxygen atoms under high temperatures, enabling the as-grown tuning of oxygen vacancies in the SrTiO3 layer during film deposition and reversible after-growth modulation in a thermal annealing process.